AT49LV8192A Key Features
- Single-voltage Read/Write Operation: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV)
- Fast Read Access Time
- Internal Erase/Program Control
- Sector Architecture
- One 8K Word (16K Bytes) Boot Block with Programming Lockout
- Two 4K Word (8K Bytes) Parameter Blocks
- One 496K Word (992K Bytes) Main Memory Array Block
- Fast Sector Erase Time
- 10 seconds
- Byte-by-byte or Word-by-word Programming