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AT49LV8192T - 8-Megabit (512K x 16) CMOS Flash Memory

Download the AT49LV8192T datasheet PDF (AT49BV8192 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 8-megabit (512k x 16) cmos flash memory.

Description

The AT49BV8192 and AT49LV8192 are 3-volt, 8-megabit Flash Memories organized as 512K words of 16 bits each.

Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 67 mW at 2.7V read.

Features

  • Low Voltage Operation.
  • 2.7V Read.
  • 5V Program/Erase.
  • Fast Read Access Time - 120 ns.
  • Internal Erase/Program Control.
  • Sector Architecture.
  • One 8K Words (16K bytes) Boot Block with Programming Lockout.
  • Two 8K Words (16K bytes) Parameter Blocks.
  • One 488K Words (976K bytes) Main Memory Array Block.
  • Fast Sector Erase Time - 10 seconds.
  • Word-By-Word Programming - 30 µs/Word.
  • Hardware Data Protec.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AT49BV8192-ATMEL.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by ATMEL
  • AT49LV8192 - 8-Megabit (512K x 16) CMOS Flash Memory
  • AT49LV8192A - 8-megabit (1M x 8/512K x 16) Flash Memory
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Full PDF Text Transcription

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Features • Low Voltage Operation – 2.7V Read – 5V Program/Erase • Fast Read Access Time - 120 ns • Internal Erase/Program Control • Sector Architecture – One 8K Words (16K bytes) Boot Block with Programming Lockout – Two 8K Words (16K bytes) Parameter Blocks – One 488K Words (976K bytes) Main Memory Array Block • Fast Sector Erase Time - 10 seconds • Word-By-Word Programming - 30 µs/Word • Hardware Data Protection • DATA Polling For End Of Program Detection • Low Power Dissipation – 25 mA Active Current – 50 µA CMOS Standby Current • Typical 10,000 Write Cycles Description The AT49BV8192 and AT49LV8192 are 3-volt, 8-megabit Flash Memories organized as 512K words of 16 bits each.
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