2SA1979S
2SA1979S is PNP Silicon Transistor manufactured by Kodenshi AUK Group.
Description
- Medium power amplifier
Features
- Large collector current : ICMax=-500m A
- Suitable for low-Voltage operation because of its low saturation voltage
- plementary pair with 2SC5342S
Ordering Information
Type NO. 2SA1979S Marking AA : h FE rank Package Code SOT-23
Outline Dimensions unit : mm
2.3~2.5 1.2~1.4
1.90 Typ.
3 2
0.4 Typ. 0.45~0.60
0.2 Min.
1.12 Max.
2.8~3.0
KST-2035-002
0.094~0.174
PIN Connections 1. Base 2. Emitter 3. Collector
0~0.1
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature
(Ta=25°C)
Symbol
VCBO VCEO VEBO IC PC Tj Tstg
Ratings
-40 -32 -5 -500 200 150 -55~150
Unit
V V V m A m W °C °C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Transistor frequency Collector output capacitance
(Ta=25°C)
Symbol
BVCBO BVCEO BVEBO ICBO IEBO h FE- VCE(sat) f T Cob
Test Condition
IC=-100µA, IE=0 IC=-1m A, IB=0 IE=-10µA, IC=0 VCB=-40V, IE=0 VEB=-5V, IC=0 VCE=-1V, IC=-100m A IC=-100m A, IB=-10m A VCE=-6V, IC=-20m A VCB=-6V, IE=0,...