2SA1979S - SILICON PNP TRANSISTOR

LZG

Key Features

Large IC,low VCE(sat),complementary pair with the 2SC5342S(3DG5342S). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -40 V VCEO -32 V VEBO -5.0 V IC -500 mA PC 200 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) fT Cob IC=-100μA IC=-1.0mA IE=-10μA VCB=-40V VEB=-5.0V VCE=-1.0V IC=-100mA VCE=-6.0V VCB=-6.0V IE=0 IE=0 IB=0 IC=0 IE=0 IC=0 IC=-100mA IB=-10mA IC=-20mA f=1.0MHz Min -40.

2SA1979S silicon pnp transistor by LZG - Datasheet Preview

Datasheet Details

Part number	2SA1979S
Manufacturer	LZG
File Size	272.06 KB
Description	SILICON PNP TRANSISTOR
Datasheet	2SA1979S Datasheet

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2SA1979S(3CG1979S) PNP /SILICON PNP TRANSISTOR ：。 Purpose: Medium power amplifier applications. ：,, 2SC5342S(3DG5342S)。 Features: Large IC,low VCE(sat),complementary pair with the 2SC5342S(3DG5342S). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -40 V VCEO -32 V VEBO -5.0 V IC -500 mA PC 200 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) fT Cob IC=-100μA IC=-1.0mA IE=-10μA VCB=-40V VEB=-5.0V VCE=-1.0V IC=-100mA VCE=-6.0V VCB=-6.0V IE=0 IE=0 IB=0 IC=0 IE=0 IC=0 IC=-100mA IB=-10mA IC=-20mA f=1.0MHz Min -40 -32 -5.