DP100
DP100 is PNP Silicon Transistor manufactured by Kodenshi AUK Group.
Features
- Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= -0.25V Typ. @IC/IB=-400m A/-20m A)
- Suitable for low voltage large current drivers
- plementary pair with DN100
- Switching Application
Ordering Information
Type NO. DP100 Marking DP100 Package Code TO-92
Outline Dimensions unit : mm
PIN Connections 1. Emitter 2. Collector 3. Base
KST-9089-000
..
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature
(Ta=25°C)
Symbol
VCBO VCEO VEBO IC PC Tj Tstg
Ratings
-15 -12 -5 -1 625 150 -55~150
Unit
V V V A m W °C °C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Base-Emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25°C)
Symbol
BVCBO BVCEO BVEBO ICBO IEBO h FE1 h FE2 VCE(sat) VBE(sat) f T Cob
Test Condition
IC=-50μA, IE=0 IC=-1m A, IB=0 IE=-50μA, IC=0 VCB=-12V, IE=0 VEB=-5V, IC=0 VCE=-1V, IC=-100m A VCE=-1V, IC=-1A IC=-400m A, IB=-20m A IC=-400m A, IB=-20m A VCE=-5V, IC=-50m A VCB=-10V, IE=0, f=1MHz
Min. Typ. Max.
-15 -12 -5 200 70 330 9 -0.1 -0.1 450 -0.3 -1.2
- Unit
V V V μA μA V V MHz p F
KST-9089-000
..
Electrical Characteristic Curves
Fig. 1 PC
- Ta Fig. 2...