DP100S
DP100S is PNP Silicon Transistor manufactured by Kodenshi AUK Group.
Features
- Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= -0.25V Typ. @IC /IB =-400m A/-20m A)
- Suitable for low voltage large current drivers
- plementary pair with DN100S
- Switching Application
Ordering Information
Type NO. DP100S Marking P03 Package Code SOT-23F
Outline Dimensions
2.4±0.1 1.6±0.1 unit : mm
2.9±0.1 1.90 BSC
3 2
0.15±0.05 0~0.1 0.4±0.05 0.9±0.1
PIN Connections 1. Base 2. Emitter 3. Collector
KST-2118-000
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature
(Ta=25° C)
Symbol
VCBO VCEO VEBO IC PC Tj T stg
Ratings
-15 -12 -5 -1 200 150 -55~150
Unit
V V V A m W °C °C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Base-Emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25° C)
Symbol
BVCBO BVCEO BVEBO ICBO IEBO h FE1 h FE2 VCE(sat) VBE(sat) f T C ob
Test Condition
IC=-50µA, I E =0 IC=-1m A, IB=0 IE =-50µA, IC =0 VCB=-12V, I E =0 VEB =-5V, IC =0 VCE=-1V, IC =-100m A VCE=-1V, IC =-1A IC=-400m A, IB =-20m A IC=-400m A, IB =-20m A VCE=-5V, IC =-50m A VCB=-10V, I E =0, f=1MHz
Min.
-15 -12 -5 200 70
- Typ.
330 9
Max.
-0.1 -0.1 450 -0.3 -1.2
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