OPA7716WDD Description
OPA7716WDD Infrared LED Chip AlGaAs / GaAs 1. Material Substrate GaAs (N Type) Epitaxial Layer AlGaAs(P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy.
OPA7716WDD is Infrared LED Chip manufactured by Kodenshi AUK Group.
| Part Number | Description |
|---|---|
| OPA7740EDD | Infrared LED Chip |
OPA7716WDD Infrared LED Chip AlGaAs / GaAs 1. Material Substrate GaAs (N Type) Epitaxial Layer AlGaAs(P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy.