OPA7716WDD Datasheet | Kodenshi AUK Group

Infrared LED Chip Al Ga As / Ga As 1. Material Substrate Ga As (N Type) Epitaxial Layer Al Ga As(P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Parameter Symbol Min Typ Max Unit Condition Characteristics Forward Voltage VF IF=50m A Reverse Current VR IR=10u A Power 9 m W IF=50m A Wavelength λP ∆λ 30 nm IF=50m A nm IF=50m A ※ Note : Power is measured by Sorter E/T system with bare chip. 4. Mechanical Data (a) Emission Area (b) Bottom Area (c) Bonding Pad (d) Chip Thickness -------------------- 15.0mil x 15.0mil -------------------- 16.0mil x 16.0mil -------------------- 130um -------------------- 7.8mil (b) (d) (c) (a) P Epi N Epi P Side Electrode N Side Electrode AUK Corp. Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea Tel. +82 63 839 1111 Fax. +82 63 835 8259...