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OPA7716WDD
Infrared LED Chip
AlGaAs / GaAs
1. Material
Substrate
GaAs (N Type)
Epitaxial Layer AlGaAs(P/N Type)
2. Electrode
N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy
3. Electro-Optical Parameter Symbol Min Typ Max Unit Condition
Characteristics Forward Voltage VF
2.0
V
IF=50mA
Reverse Current VR
8
V
IR=10uA
Power
PO
9
mW IF=50mA
Wavelength λP
770
∆λ
30
nm IF=50mA nm IF=50mA
※ Note : Power is measured by Sorter E/T system with bare chip.
4. Mechanical Data (a) Emission Area (b) Bottom Area (c) Bonding Pad (d) Chip Thickness
-------------------- 15.0mil x 15.0mil -------------------- 16.0mil x 16.0mil -------------------- 130um -------------------- 7.8mil
(b)
(d)
(c)
(a)
P Epi N Epi
P Side Electrode
N Side Electrode
AUK Corp.
OPA7716WDD Datasheet
