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OPA7716WDD - Infrared LED Chip

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Part number OPA7716WDD
Manufacturer AUK
File Size 84.34 KB
Description Infrared LED Chip
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OPA7716WDD Infrared LED Chip AlGaAs / GaAs 1. Material Substrate GaAs (N Type) Epitaxial Layer AlGaAs(P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Parameter Symbol Min Typ Max Unit Condition Characteristics Forward Voltage VF 2.0 V IF=50mA Reverse Current VR 8 V IR=10uA Power PO 9 mW IF=50mA Wavelength λP 770 ∆λ 30 nm IF=50mA nm IF=50mA ※ Note : Power is measured by Sorter E/T system with bare chip. 4. Mechanical Data (a) Emission Area (b) Bottom Area (c) Bonding Pad (d) Chip Thickness -------------------- 15.0mil x 15.0mil -------------------- 16.0mil x 16.0mil -------------------- 130um -------------------- 7.8mil (b) (d) (c) (a) P Epi N Epi P Side Electrode N Side Electrode AUK Corp.
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