OPA7740EDD Datasheet | Kodenshi AUK Group

Infrared LED Chip Al Ga As / Ga As 1. Material Substrate Ga As (N Type) Epitaxial Layer Al Ga As (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Parameter Symbol Min Typ Max Unit Condition Characteristics Forward Voltage VF IF=350m A Reverse Current VR IR=10u A Power PO 17 m W IF=350m A Wavelength λP ∆λ 30 nm IF=50m A nm IF=50m A ※ Note : LED chip is mounted on TO-18 gold header without resin coatin 4. Mechanical Data (a) Emission Area (b) Bottom Area (c) Bonding Pad (d) Chip Thickness --------------------- 39.0mil x --------------------- 40.0mil x --------------------- 120um --------------------- 7.8mil 39.0mil 40.0mil (d) P Epi N Epi P Side Electrode N Side Electrode AUK Corp. Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea Tel. +82 63 839 1111 Fax. +82 63 835 8259 .auk.co.kr...