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OPA7740EDD - Infrared LED Chip

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Part number OPA7740EDD
Manufacturer AUK
File Size 94.19 KB
Description Infrared LED Chip
Datasheet download datasheet OPA7740EDD Datasheet
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OPA7740EDD Infrared LED Chip AlGaAs / GaAs 1. Material Substrate GaAs (N Type) Epitaxial Layer AlGaAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Parameter Symbol Min Typ Max Unit Condition Characteristics Forward Voltage VF 2.1 V IF=350mA Reverse Current VR 4 V IR=10uA Power PO 17 mW IF=350mA Wavelength λP 770 ∆λ 30 nm IF=50mA nm IF=50mA ※ Note : LED chip is mounted on TO-18 gold header without resin coatin 4. Mechanical Data (a) Emission Area (b) Bottom Area (c) Bonding Pad (d) Chip Thickness --------------------- 39.0mil x --------------------- 40.0mil x --------------------- 120um --------------------- 7.8mil 39.0mil 40.0mil (d) P Epi N Epi P Side Electrode N Side Electrode AUK Corp.
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