SMN04L20IS Overview
Key Features
- Drain-Source breakdown voltage: BVDSS=200V (Min.)
- Low gate charge: Qg=4nC (Typ.)
- Low drain-source On-Resistance: RDS(on)=1.35Ω (Max.)
- 100% avalanche tested
- RoHS compliant device
| Part | SMN04L20IS |
|---|---|
| Description | Logic Level N-Ch Power MOSFET |
| Category | MOSFET |
| Manufacturer | Kodenshi AUK Group |
| Size | 434.93 KB |
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