SMN04L20IS Key Features
- Drain-Source breakdown voltage: BVDSS=200V (Min.)
- Low gate charge: Qg=4nC (Typ.)
- Low drain-source On-Resistance: RDS(on)=1.35Ω (Max.)
- 100% avalanche tested
- RoHS pliant device
- Y: Year Code
- WW: Week Code
- Part: SMN04L20IS
- Description: Logic Level N-Ch Power MOSFET
- Manufacturer: Kodenshi AUK Group
- Size: 434.93 KB
Related Kodenshi AUK Group Datasheets
| Part Number | Description |
|---|---|
| SMN04L20D | Logic Level N-Ch Power MOSFET |
| SMN0470F | Advanced N-Ch Power MOSFET |
| SMN01L20Q | Logic Level N-Ch Power MOSFET |
| SMN01Z30Q | Advanced N-Ch Power MOSFET |
| SMN0250F | Advanced N-Ch Power MOSFET |