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SMN04L20IS - Logic Level N-Ch Power MOSFET

Key Features

  • Drain-Source breakdown voltage: BVDSS=200V (Min. ).
  • Low gate charge: Qg=4nC (Typ. ).
  • Low drain-source On-Resistance: RDS(on)=1.35Ω (Max. ).
  • 100% avalanche tested.
  • RoHS compliant device Ordering Information Part Number Marking Package SMN04L20IS SMN04L20 I-PAK (Short Lead) GDS I-PAK Marking Information SMN 04L20 YWW Column 1, 2: Device Code Column 3: Production Information e. g. ) YWW -. Y: Year Code -. WW: Week Code Absolute maximum ratings (TC=25C unless other.

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SMN04L20IS Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features  Drain-Source breakdown voltage: BVDSS=200V (Min.)  Low gate charge: Qg=4nC (Typ.)  Low drain-source On-Resistance: RDS(on)=1.35Ω (Max.)  100% avalanche tested  RoHS compliant device Ordering Information Part Number Marking Package SMN04L20IS SMN04L20 I-PAK (Short Lead) GDS I-PAK Marking Information SMN 04L20 YWW Column 1, 2: Device Code Column 3: Production Information e.g.) YWW -. Y: Year Code -.