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STD361 - NPN Silicon Transistor

General Description

Extremely low collector-to-emitter saturation voltage ( VCE(SAT)=0.2V Typ.

Suitable for low voltage large current drivers

Type NO.

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www.DataSheet4U.com Semiconductor STD361 NPN Silicon Transistor Description • Extremely low collector-to-emitter saturation voltage ( VCE(SAT)=0.2V Typ. @IC/IB=3A/150 ㎃) • Suitable for low voltage large current drivers • Switching Application Ordering Information Type NO. STD361 Marking YA Package Code SOT-89 Outline Dimensions unit : mm PIN Connections 1. Base 2. Collector 3. Emitter KST-8007-002 1 STD361 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector power dissipation Junction temperature Storage temperature (Ta=25°C) Symbol VCBO VCEO VEBO IC PC PC* TJ Tstg Ratings 40 15 7 5 0.5 2 150 -55~150 Unit V V V A W °C °C * : When mounted on 40×40×0.