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STK7000 - N-Channel Enhancement-Mode MOSFET

General Description

High speed switching application.

High density cell design for low RDS(ON).

Voltage controlled small signal switch www.DataSheet4U.com

High saturation current capability.

Key Features

  • Ordering Information Type NO. STK7000 Marking STK7000 Package Code TO-92 Outline Dimensions 3.45±0.1 4.5±0.1 4.5±0.1 2.25±0.1 unit : mm 0.4±0.02 2.06±0.1 1.27 Typ. 2.54 Typ. 1 2 3 PIN Connections 1. Source 2. Gate 3. Drain 0.38 1.20±0.1 KST-9078-003 1 STK7000 Absolute maximum ratings Characteristic Drain-Source voltage Gate-Source voltage Maximum Drain current Pulsed Drain Current Power dissipation Maximum Junction-to-Ambient www. DataSheet4U. com (Ta=25° C) Symbol VDSS VGS ID IDM PD.

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Datasheet Details

Part number STK7000
Manufacturer AUK
File Size 120.97 KB
Description N-Channel Enhancement-Mode MOSFET
Datasheet download datasheet STK7000 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Semiconductor STK7000 N-Channel Enhancement-Mode MOSFET Description • High speed switching application. • High density cell design for low RDS(ON). • Voltage controlled small signal switch www.DataSheet4U.com • High saturation current capability. Features Ordering Information Type NO. STK7000 Marking STK7000 Package Code TO-92 Outline Dimensions 3.45±0.1 4.5±0.1 4.5±0.1 2.25±0.1 unit : mm 0.4±0.02 2.06±0.1 1.27 Typ. 2.54 Typ. 1 2 3 PIN Connections 1. Source 2. Gate 3. Drain 0.38 1.20±0.1 KST-9078-003 1 STK7000 Absolute maximum ratings Characteristic Drain-Source voltage Gate-Source voltage Maximum Drain current Pulsed Drain Current Power dissipation Maximum Junction-to-Ambient www.DataSheet4U.