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STK7002B - N-Channel Enhancement-Mode MOSFET

Key Features

  • High Voltage: BVDSS=60V(Min. ).
  • Low Crss : Crss=3.1pF(Typ. ).
  • Low gate charge : Qg=2.8nC(Typ. ).
  • Low RDS(on) :RDS(on)=2.8Ω(Typ. ) www. DataSheet4U. com Ordering Information Type NO. STK7002B Marking 72B Package Code SOT-23 Outline Dimensions unit : mm 1 3 2 PIN Connections 1. Gate 2. Source 3. Drain KSD-T5C042-000 1 STK7002B Absolute maximum ratings Characteristic Drain-source voltage Gate-source voltage Drain current (DC) Drain current (Pulsed) www. DataShe.

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Datasheet Details

Part number STK7002B
Manufacturer AUK
File Size 401.09 KB
Description N-Channel Enhancement-Mode MOSFET
Datasheet download datasheet STK7002B Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Semiconductor STK7002B N-Channel Enhancement-Mode MOSFET SWITCHING REGULATOR APPLICATIONS Features • High Voltage: BVDSS=60V(Min.) • Low Crss : Crss=3.1pF(Typ.) • Low gate charge : Qg=2.8nC(Typ.) • Low RDS(on) :RDS(on)=2.8Ω(Typ.) www.DataSheet4U.com Ordering Information Type NO. STK7002B Marking 72B Package Code SOT-23 Outline Dimensions unit : mm 1 3 2 PIN Connections 1. Gate 2. Source 3. Drain KSD-T5C042-000 1 STK7002B Absolute maximum ratings Characteristic Drain-source voltage Gate-source voltage Drain current (DC) Drain current (Pulsed) www.DataSheet4U.com * ** (Ta=25°C) Symbol VDSS VGSS ID (Tc=25℃) (Tc=100℃) IDP PD ② ② ① ① IAS EAS IAR EAR TJ Tstg Rating 60 ±20 380 240 1.52 350 380 3.8 380 0.