AUK Corporation SUF1002
Dual N-ch Trench MOSFET
FEATURES
● Low drain-source On-resistance: RDS(on)=24mΩ @VGS=10V, ID=2.9A● Low gate charge: Qg=79.5nC (Typ.)
● High power and current handing capability
● Lead free product is acquired Ordering Information Part Number Marking Code Package SOP-8 Packaging SUF1002 SUF1002 SOP-8 Tape & Reel Marking and Pin Assignment SUF1002 YWW Column 1: Device Code Column 2: Production Information - YWW: Year & Week Code
ABSOLUTE MAXIMUM RATINGS
(Tamb=25℃, Unless otherwise noted) Characteristic Symbol Drain-source voltage Gate-source voltage Drain current (DC) Drain current (Pulsed) * Total power dissipation 1) Avalanche current (Single) 3) Single pulsed avalanche energy 3) Avalanche current (Repetitive) 2) Repetitive avalanche energy 2) Operating junction temperature Storage temperature range * Limited by maximum junction temperature VDSS VGSS ID IDP PD IAS EAS IAR EAR Tj Tstg Rev. date: 29-OCT-13 KSD-T7F