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SUN07A65D
New Generation N-Ch Power MOSFET
HIGH SPEED SWITCHING APPLICATION
Features
Low drain-source On resistance: RDS(on)=1.2Ω (Typ.) Low gate charge: Qg=21nC (Typ.) Low reverse transfer capacitance: Crss=5pF (Typ.) Lower EMI noise
RoHS compliant device
100% avalanche tested
Ordering Information
Part Number
Marking
Package
SUN07A65D
SUN07A65
TO-252
D
G S
TO-252
Marking Information
SUN
07A65 YWW
Column 1, 2: Device Code Column 3: Production Information e.g.) YWW
-.