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TBN4226 - Si NPN Transistor

Description

Base Emitter Collector 1 1.4 0.9 3 3 0.2 0.11 2 0.6 0~0.1 6

Features

  • igh gain bandwidth product fT = 6 GHz at VCE = 3 V, IC = 7 mA fT = 8 GHz at VCE = 3 V, IC = 30 mA - High power gain - Low noise figure NF = 1.2 dB at VCE = 3 V, IC = 7 mA, f = 1 GHz |S21|2 = 9.0 dB at VCE = 3 V, IC = 7 mA, f = 1 GHz 0.90±0.1 Pin Configuration 1. Base 2. Emitter 3. Collector.
  • Absolute Maximum Ratings (TA = 25 ℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Operating Junction Temperat.

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Datasheet preview – TBN4226

Datasheet Details

Part number TBN4226
Manufacturer AUK
File Size 285.81 KB
Description Si NPN Transistor
Datasheet download datasheet TBN4226 Datasheet
Additional preview pages of the TBN4226 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com Semiconductor TBN4226 Series Si NPN Transistor SOT-323 Unit in mm 2.1±0.1 1.25±0.05 □ Applications - VHF and UHF low noise amplifier - Wide band amplifier 2.0±0.2 1.30±0.1 1 3 2 0.30±0.1 0.1 Min. □ Features - High gain bandwidth product fT = 6 GHz at VCE = 3 V, IC = 7 mA fT = 8 GHz at VCE = 3 V, IC = 30 mA - High power gain - Low noise figure NF = 1.2 dB at VCE = 3 V, IC = 7 mA, f = 1 GHz |S21|2 = 9.0 dB at VCE = 3 V, IC = 7 mA, f = 1 GHz 0.90±0.1 Pin Configuration 1. Base 2. Emitter 3.
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