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TBN4227 - Si NPN Transistor

General Description

Base Emitter Collector 1 1.4 0.9 3 3 0.2 0.11 2 0.6 0~0.1 6

Key Features

  • igh gain bandwidth product fT = 8 GHz at VCE = 3 V, IC = 7 mA fT = 9 GHz at VCE = 3 V, IC = 20 mA - High power gain - Low noise figure NF = 1.2 dB at VCE = 3 V, IC = 3 mA, f = 1 GHz |S21|2 = 11.4 dB at VCE = 3 V, IC = 7 mA, f = 1 GHz 0.90±0.1 Pin Configuration 1. Base 2. Emitter 3. Collector.
  • Absolute Maximum Ratings (TA = 25 ℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Operating Junction Tempera.

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Other Datasheets by AUK (Kodenshi AUK Group)

Part Number Description
TBN4226 Si NPN Transistor

Full PDF Text Transcription (Reference)

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www.DataSheet4U.com Semiconductor TBN4227 Series Si NPN Transistor SOT-323 Unit in mm 2.1±0.1 1.25±0.05 □ Applications - VHF and UHF low noise amplifier - Wide band amplifier 2.0±0.2 1.30±0.1 1 3 2 0.30±0.1 0.1 Min. □ Features - High gain bandwidth product fT = 8 GHz at VCE = 3 V, IC = 7 mA fT = 9 GHz at VCE = 3 V, IC = 20 mA - High power gain - Low noise figure NF = 1.2 dB at VCE = 3 V, IC = 3 mA, f = 1 GHz |S21|2 = 11.4 dB at VCE = 3 V, IC = 7 mA, f = 1 GHz 0.90±0.1 Pin Configuration 1. Base 2. Emitter 3.