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THN6701B - SiGe NPN Transistor

Datasheet Summary

Features

  • s - High power gain GP = 14 dB at VCE = 6 V, IC = 400 mA, f = 465 MHz - High power POUT = 35 dBm(3W) at VCE = 6 V, ICQ = 50 mA, f = 465 MHz THN6701B SiGe NPN Transistor SOT-223 Unit in mm 6.5 3.0 4 3.5 7.0 12 2.3 0.7 4.6 3 Pin Configuration 1. Base 2. Emitter 3. Collector 4. Emitter.
  • Absolute Maximum Ratings (TA = 25 ℃) Param eter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Current Total Power Dissipati.

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Datasheet Details

Part number THN6701B
Manufacturer AUK
File Size 546.71 KB
Description SiGe NPN Transistor
Datasheet download datasheet THN6701B Datasheet
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Semiconductor □ Applications - VHF and UHF power amplifier □ Features - High power gain GP = 14 dB at VCE = 6 V, IC = 400 mA, f = 465 MHz - High power POUT = 35 dBm(3W) at VCE = 6 V, ICQ = 50 mA, f = 465 MHz THN6701B SiGe NPN Transistor SOT-223 Unit in mm 6.5 3.0 4 3.5 7.0 12 2.3 0.7 4.6 3 Pin Configuration 1. Base 2. Emitter 3. Collector 4. Emitter □ Absolute Maximum Ratings (TA = 25 ℃) Param eter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Sym bol BVCBO BVCEO BVEBO IC Ptot Tj Tstg Ratings 17 12 1.
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