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Semiconductor
□ Applications
- VHF and UHF wide band amplifier
□ Features
- Medium power application (2W) - Power gain GP = 15 dB at VCE = 6.0 V, f = 460 MHz, PIN = 0 dBm Output power
POUT = 33.5 dBm at VCE = 6.0 V, ICQ = 30 mA, f = 460 MHz
THN6702F
SiGe NPN Transistor
SOT-89
Unit in mm
3 42
1
Pin Configuration
1. Base 2. Emitter 3. Collector 4. Emitter
□ Absolute Maximum Ratings (TA = 25 ℃)
Param eter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature
Sym bol BVCBO BVCEO BVEBO
IC Ptot Tj Tstg
Ratings 15 10 1.
THN6702F Datasheet
