TMF8901F - Si RF LDMOS Transistor

Features

s - Power gain GP = 12.5 dB at VDS = 4.5 V, IDset = 200 mA, f = 470 MHz - Output power POUT = 32 dBm at VDS = 4.5 V, IDset = 200 mA, f = 470 MHz - Drain efficiency ηD = 60 % (typ. ) www. DataSheet4U. com.
Marking 4 Pin Configuration 1. Gate 2. Source 8901 1 2 3 3. Drain 4. Source.
Absolute Maximum Ratings (TA = 25 ℃) Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature Symbol VDS VGS ID Ptot Tc.

AUK

TMF8901F Si RF LDMOS Transistor by AUK - Datasheet Preview — Datasheet preview – TMF8901F

Datasheet Details

Part number	TMF8901F
Manufacturer	AUK
File Size	293.35 KB
Description	Si RF LDMOS Transistor
Datasheet	TMF8901F Datasheet
Additional preview pages of the TMF8901F datasheet.

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Semiconductor TMF8901F Si RF LDMOS Transistor SOT-89 Unit in mm □ Applications - VHF and UHF wide band amplifier 4 □ Features - Power gain GP = 12.5 dB at VDS = 4.5 V, IDset = 200 mA, f = 470 MHz - Output power POUT = 32 dBm at VDS = 4.5 V, IDset = 200 mA, f = 470 MHz - Drain efficiency ηD = 60 % (typ.) www.DataSheet4U.com □ Marking 4 Pin Configuration 1. Gate 2. Source 8901 1 2 3 3. Drain 4. Source □ Absolute Maximum Ratings (TA = 25 ℃) Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature Symbol VDS VGS ID Ptot Tch Tstg Ratings 13.0 4.0 1.

Published: Apr 15, 2007 |