TMF8901F Description
Semiconductor TMF8901F Si RF LDMOS Transistor SOT-89 Unit in mm □ Applications - VHF and UHF wide band amplifier 4.
TMF8901F Key Features
- Power gain GP = 12.5 dB at VDS = 4.5 V, IDset = 200 mA, f = 470 MHz
- Output power POUT = 32 dBm at VDS = 4.5 V, IDset = 200 mA, f = 470 MHz
- Drain efficiency ηD = 60 % (typ.)
- Marking