Download BC807F Datasheet PDF
Kodenshi AUK Group
BC807F
BC807F is PNP Silicon Transistor manufactured by Kodenshi AUK Group.
Features - Suitable for AF-Driver stage and low power output stages - plementary Pair with BC817F Ordering Information Type NO. BC807F Marking LA : h FE rank Package Code0 SOT-23F Outline Dimensions 2.4±0.1 1.6±0.1 unit : mm 2.9±0.1 1.90 BSC 0.4±0.05 0.15±0.05 KST-2085-000 0.9±0.1 0~0.1 PIN Connections 1. Base 2. Emitter 3. Collector Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25°C) Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings -50 -35 -5 -800 200 150 -55~150 Unit V V V m A m W °C °C Electrical Characteristics Characteristic Collector-Emitter breakdown voltage Base-Emitter turn on voltage Collector-Emitter saturation voltage Collector cut-off current DC current gain Transition frequency Collector output capacitance (Ta=25°C) Symbol BVCEO VBE(ON) VCE(sat) ICBO h FE- f T Cob Test Condition IC=-1m A, IB=0 VCE=-1V, IC=-300m A IC=-500m A, IB=-50m A VCB=-25V, IE=0 VCE=-1V, IC=-100m A VCB=-5V, IE=10m A f=100MHz VCB=-10V, IE=0, f=1MHz Min. Typ. Max. -35 100 100 16 -1.2 -700 -100 630 - Unit V V m V n A MHz p F - : h FE rank / 16(A):100 ~ 250, 25(B):160 ~ 400, 40(C):250 ~...