BC807F
BC807F is PNP Silicon Transistor manufactured by Kodenshi AUK Group.
Features
- Suitable for AF-Driver stage and low power output stages
- plementary Pair with BC817F
Ordering Information
Type NO. BC807F Marking LA : h FE rank Package Code0 SOT-23F
Outline Dimensions
2.4±0.1 1.6±0.1 unit : mm
2.9±0.1 1.90 BSC
0.4±0.05
0.15±0.05
KST-2085-000
0.9±0.1
0~0.1
PIN Connections 1. Base 2. Emitter 3. Collector
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature
(Ta=25°C)
Symbol
VCBO VCEO VEBO IC PC Tj Tstg
Ratings
-50 -35 -5 -800 200 150 -55~150
Unit
V V V m A m W °C °C
Electrical Characteristics
Characteristic
Collector-Emitter breakdown voltage Base-Emitter turn on voltage Collector-Emitter saturation voltage Collector cut-off current DC current gain Transition frequency Collector output capacitance
(Ta=25°C)
Symbol
BVCEO VBE(ON) VCE(sat) ICBO h FE- f T Cob
Test Condition
IC=-1m A, IB=0 VCE=-1V, IC=-300m A IC=-500m A, IB=-50m A VCB=-25V, IE=0 VCE=-1V, IC=-100m A VCB=-5V, IE=10m A f=100MHz VCB=-10V, IE=0, f=1MHz
Min. Typ. Max.
-35 100 100 16 -1.2 -700 -100 630
- Unit
V V m V n A MHz p F
- : h FE rank / 16(A):100 ~ 250, 25(B):160 ~ 400, 40(C):250 ~...