BC856
BC856 is PNP Silicon Transistor manufactured by Kodenshi AUK Group.
Features
- High voltage : VCEO=-55V
- plementary pair with BC846
Ordering Information
Type NO. BC856 Marking TA : h FE rank Package Code SOT-23
Outline Dimensions
2.4±0.1 1.30±0.1 unit : mm
1.90 Typ.
3 2
0.4 Typ. 0.45~0.60
0.2 Min.
1.12 Max.
2.9±0.1
KST-2009-000
PIN Connections 1. Base 2. Emitter 3. Collector
0~0.1
-0.03 +0.05
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature
(Ta=25°C)
Symbol
VCBO VCEO VEBO IC PC Tj Tstg
Ratings
-80 -55 -5 -100 200 150 -55~150
Unit
V V V m A m W °C °C
Electrical Characteristics
Characteristic
Collector-Emitter breakdown voltage Base-Emitter turn on voltage Base-Emitter saturation voltage Collector-Emitter saturation voltage Collector cut-off current DC current gain Transition frequency Collector output capacitance Noise figure
(Ta=25°C)
Symbol
BVCEO VBE(ON) VBE(sat) VCE(sat) ICBO h FE- f T Cob NF
Test Condition
IC=-2m A, IB=0 VCE=-5V, IC=-2m A IC=-100m A, IB=-5m A IC=-100m A, IB=-5m A VCB=-35V, IE=0 VCE=-5V, IC=-2m A VCB=-5V, IC=-10m A VCB=-10V, IE=0, f=1MHz VCE=-5V, IC=-200µA, f=1KHz,Rg=2KΩ
Min. Typ. Max.
-55 110 -900 150 -700 -650 -15 800 4.5...
