BC856 - SILICON PLANAR EPITAXIAL TRANSISTORS

CDIL

Datasheet Details

Part number	BC856
Manufacturer	CDIL
File Size	76.69 KB
Description	SILICON PLANAR EPITAXIAL TRANSISTORS
Datasheet	BC856 Datasheet

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H BC857A = 3E BC857B = 3F BC857C = 3G BC858 = 3M BC858A = 3J BC858B = 3K BC858C = 3L Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm ABSOLUTE MAXIMUM RATINGS Collector–emitter voltage (+VBE = 1 V) Collector–emitter voltage (open base) Collector current (peak value) Total power dissipation up to Tamb = 60 °C Junction temperature Small–signal current gain –IC = 2 mA; –VCE = 5 V; f = 1 kHz Transition frequency at f = 100 MHz –IC = 10 mA; –VCE = 5 V Noise figure at RS = 2 kW –IC = 200 mA; –VCE =