Continental Device India BC858W
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
ABSOLUTE MAXIMUM RATINGS
(Ta=25ºC unless specified otherwise)DESCRIPTION
SYMBOL BC856W Collector Base Voltage Collector Emitter Voltage VCBO VCEO 80 65 Emitter Base Voltage VEBO 5 Collector Current (DC) IC Peak Collector Current Peak Base Current ICM IBM Power Dissipation upto Tamb=25ºC *Ptot Storage Temperature Tstg Junction Temperature Tj Operating Ambient Temperature Tamb BC857W 50 45 5 100 200 200 200 - 65 to +150 150 - 65 to +150 BC858W 30 30 5 UNITS V V V mA mA mA mW ºC ºC ºC THERMAL RESISTANCE From junction to ambient *Rth (j-a) 625 K/W *Sot-323 standard mounting conditionELECTRICAL CHARACTERISTICS
(Tamb=25ºC unless sp