Galaxy Century Microelectronics BC858W
PNP Silicon Epitaxial Planar Transistor
BC858W Specifications
- Package : 100
- Polarity : PNP
- Max Collector Current : 100mA
- Terminals : 3
- Collector Emitter Voltage : 30V
- Collector Emitter Saturation Voltage : 600mV
- Max Power Dissipation : 200mW
- Max Operating Temp : 150°C
- Min Operating Temp : -65°C
Source:
Octopart
| Part No. | BC858W |
|---|---|
| Datasheet | BC858W Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | PNP Silicon Epitaxial Planar Transistor |
| Buy | Stock & Price |
FEATURES
z For AF input stages and driver applications. z High current gain. Pb Lead-free z Low collector-emitter saturation voltage. z Low noise between 30Hz and 15 kHz. z Complementary types:BC846W,BC847W,BC848W.APPLICATIONS
z General purpose switching and amplification application. SOT-323 ORDERING INFORMATION Type No. Marking BC856W BC857W BC858W 3A/3B 3E/3F/3G 3J/3K/3L Package Code SOT-323 SOT-323 SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO Parameter Collector-Base Voltage Collector-Emitter Voltage BC856W BC857W BC858W BC856W BC857W BC858W Value -80 -50 -30 -65 -45 -30 VEBO Emitter-Base Voltage -5 IC Collector Current -Continuous -100 ICM Peak Collector current -200 IBM Peak Base current -200 PC Collector Dissipation 200 Tj,Tstg Junction and Storage Temperature -65 to +150 Units V V V mA mA mA mW ℃ F046 Rev.A
