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BC858W - PNP general purpose transistors

Download the BC858W datasheet PDF. This datasheet also covers the BC856W variant, as both devices belong to the same pnp general purpose transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

PNP transistor in a SOT323 plastic package.

NPN complements: BC846W, BC847W and BC848W.

3A 3B 3H 3E 3F 3G 3M

1.

= -: made in Hong Kong.

= t

Key Features

  • Low current (max. 100 mA).
  • Low voltage (max. 65 V).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BC856W_PhilipsSemiconductors.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by NXP Semiconductors

Part Number Description
BC858 PNP Transistor
BC858AF PNP general purpose transistors
BC858B PNP Transistor
BC858BF PNP general purpose transistors
BC858CF PNP general purpose transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 BC856W; BC857W; BC858W PNP general purpose transistors Product data sheet Supersedes data of 1999 Apr 12 2002 Feb 04 NXP Semiconductors PNP general purpose transistors Product data sheet BC856W; BC857W; BC858W FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION PNP transistor in a SOT323 plastic package. NPN complements: BC846W, BC847W and BC848W. MARKING TYPE NUMBER BC856W BC856AW BC856BW BC857W BC857AW BC857BW BC857CW BC858W MARKING CODE(1) 3D* 3A* 3B* 3H* 3E* 3F* 3G* 3M* Note 1. * = -: made in Hong Kong. * = t: made in Malaysia.