BC856F
BC856F is PNP Silicon Transistor manufactured by Kodenshi AUK Group.
Features
- High voltage : VCEO=-55V
- plementary pair with BC846F
Ordering Information
Type NO. BC856F Marking TA : h FE rank Package Code SOT-23F
Outline Dimensions
2.4±0.1 1.6±0.1 unit : mm
2.9±0.1 1.90 BSC
0.4±0.05 0.9±0.1
0.15±0.05
PIN Connections 1. Base 2. Emitter 3. Collector
0~0.1
KST-2092-000
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature
(Ta=25°C)
Symbol
VCBO VCEO VEBO IC PC Tj Tstg
Ratings
-80 -55 -5 -100 200 150 -55~150
Unit
V V V m A m W °C °C
Electrical Characteristics
Characteristic
Collector-Emitter breakdown voltage Base-Emitter turn on voltage Base-Emitter saturation voltage Collector-Emitter saturation voltage Collector cut-off current DC current gain Transition frequency Collector output capacitance Noise figure
(Ta=25°C)
Symbol
BVCEO VBE(ON) VBE(sat) VCE(sat) ICBO h FE- f T Cob NF
Test Condition
IC=-2m A, IB=0 VCE=-5V, IC=-2m A IC=-100m A, IB=-5m A IC=-100m A, IB=-5m A VCB=-35V, IB=0 VCE=-5V, IE=-2m A VCB=-5V, IC=-10m A VCB=-10V, IE=0, f=1MHz VCE=-5V, IC=-200µA, f=1KHz,Rg=2KΩ
Min. Typ. Max.
-55 110 -900 150 -700 -650 -15 800 4.5 10
Unit
V m V m V m V n A MHz p F d B
- : h FE rank / A : 110 ~ 220, B : 200 ~ 450, C : 420 ~ 800
KST-2092-000...
