HSCH-5330 Datasheet | Avago Technologies

HSCH-53xx Series Beam Lead Schottky Diodes for Mixers and Detectors (1-26 GHz) Data Sheet Description These beam lead diodes are constructed using a metalsemiconductor Schottky barrier junction. Advanced epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated microwave semiconductor. A nitride passivation layer provides immunity from contaminants which could otherwise lead to IR drift. The Avago beam lead process allows for large beam anchor pads for rugged construction (typical 6 gram pull strength) without degrading capacitance. Applications The beam lead diode is ideally suited for use in stripline or microstrip circuits. Its small...