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ALD110802 - QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD MATCHED PAIR MOSFET ARRAY

This page provides the datasheet information for the ALD110802, a member of the ALD110902 QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD MATCHED PAIR MOSFET ARRAY family.

Datasheet Summary

Description

ALD110802/ALD110902 are high precision monolithic quad/dual enhancement mode N-Channel MOSFETS matched at the factory using ALD’s proven EPAD® CMOS technology.

These devices are intended for low voltage, small signal applications.

Features

  • Enhancement-mode (normally off).
  • Precision Gate Threshold Voltage of +0.20V.
  • Matched MOSFET-to-MOSFET characteristics.
  • Tight lot-to-lot parametric control.
  • Low input capacitance.
  • VGS(th) match (VOS) to 10mV.
  • High input impedance.
  • 1012Ω typical.
  • Positive, zero, and negative VGS(th) temperature coefficient.
  • DC current gain >108.
  • Low input and output leakage currents.

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Datasheet preview – ALD110802

Datasheet Details

Part number ALD110802
Manufacturer Advanced Linear Devices
File Size 105.93 KB
Description QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD MATCHED PAIR MOSFET ARRAY
Datasheet download datasheet ALD110802 Datasheet
Additional preview pages of the ALD110802 datasheet.

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Full PDF Text Transcription

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ADVANCED LINEAR DEVICES, INC. e TM EPAD ® ENAB L E D ALD110802/ALD110902 QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® PRECISION MATCHED PAIR MOSFET ARRAY VGS(th)= +0.20V GENERAL DESCRIPTION APPLICATIONS ALD110802/ALD110902 are high precision monolithic quad/dual enhancement mode N-Channel MOSFETS matched at the factory using ALD’s proven EPAD® CMOS technology. These devices are intended for low voltage, small signal applications. The ALD110802/ALD110902 MOSFETS are designed and built for exceptional device electrical characteristics matching. Since these devices are on the same monolithic chip, they also exhibit excellent tempco tracking characteristics.
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