ALD110802 Description
APPLICATIONS ALD110802/ALD110902 are high precision monolithic quad/dual enhancement mode N-Channel MOSFETS matched at the factory using ALD’s proven EPAD® CMOS technology. These devices are intended for low voltage, small signal applications. The ALD110802/ALD110902 MOSFETS are designed and built for exceptional device matching.
ALD110802 Key Features
- Enhancement-mode (normally off)
- Precision Gate Threshold Voltage of +0.20V
- Matched MOSFET-to-MOSFET characteristics
- Tight lot-to-lot parametric control
- Low input capacitance
- VGS(th) match (VOS) to 10mV
- High input impedance
- 1012Ω typical
- Positive, zero, and negative VGS(th) temperature coefficient
- DC current gain >108