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ALD110808 - QUAD/DUAL N-CHANNEL MOSFET

Datasheet Summary

Description

ALD110808A/ALD110808/ALD110908A/ALD110908 are high precision monolithic quad/dual enhancement mode N-Channel MOSFETs matched at the factory using ALD’s proven EPAD® CMOS technology.

These devices are intended for low voltage, small signal applications.

Features

  • Enhancement-mode (normally off).
  • Standard Gate Threshold Voltages: +0.80V.
  • Matched MOSFET to MOSFET characteristics.
  • Tight lot to lot parametric control.
  • Low input capacitance.
  • VGS(th) match to 2mV and 10mV.
  • High input impedance.
  • 1012Ω typical.
  • Positive, zero, and negative VGS(th) temperature coefficient.
  • DC current gain >108.
  • Low input and output leakage currents.

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Datasheet preview – ALD110808

Datasheet Details

Part number ALD110808
Manufacturer Advanced Linear Devices
File Size 106.21 KB
Description QUAD/DUAL N-CHANNEL MOSFET
Datasheet download datasheet ALD110808 Datasheet
Additional preview pages of the ALD110808 datasheet.

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Full PDF Text Transcription

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ADVANCED LINEAR DEVICES, INC. e TM EPAD ® ENAB L E D ALD110808A/ALD110808/ALD110908A/ALD110908 QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® PRECISION MATCHED PAIR MOSFET ARRAY VGS(th)= +0.80V GENERAL DESCRIPTION ALD110808A/ALD110808/ALD110908A/ALD110908 are high precision monolithic quad/dual enhancement mode N-Channel MOSFETs matched at the factory using ALD’s proven EPAD® CMOS technology. These devices are intended for low voltage, small signal applications. These MOSFET devices are built on the same monolithic chip, so they exhibit excellent temperature tracking characteristics. They are versatile as circuit elements and are useful design component for a broad range of analog applications.
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