Datasheet4U Logo Datasheet4U.com

ALD110902 - QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD MATCHED PAIR MOSFET ARRAY

General Description

ALD110802/ALD110902 are high precision monolithic quad/dual enhancement mode N-Channel MOSFETS matched at the factory using ALD’s proven EPAD® CMOS technology.

These devices are intended for low voltage, small signal applications.

Key Features

  • Enhancement-mode (normally off).
  • Precision Gate Threshold Voltage of +0.20V.
  • Matched MOSFET-to-MOSFET characteristics.
  • Tight lot-to-lot parametric control.
  • Low input capacitance.
  • VGS(th) match (VOS) to 10mV.
  • High input impedance.
  • 1012Ω typical.
  • Positive, zero, and negative VGS(th) temperature coefficient.
  • DC current gain >108.
  • Low input and output leakage currents.

📥 Download Datasheet

Datasheet Details

Part number ALD110902
Manufacturer Advanced Linear Devices
File Size 105.93 KB
Description QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD MATCHED PAIR MOSFET ARRAY
Datasheet download datasheet ALD110902 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ADVANCED LINEAR DEVICES, INC. e TM EPAD ® ENAB L E D ALD110802/ALD110902 QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® PRECISION MATCHED PAIR MOSFET ARRAY VGS(th)= +0.20V GENERAL DESCRIPTION APPLICATIONS ALD110802/ALD110902 are high precision monolithic quad/dual enhancement mode N-Channel MOSFETS matched at the factory using ALD’s proven EPAD® CMOS technology. These devices are intended for low voltage, small signal applications. The ALD110802/ALD110902 MOSFETS are designed and built for exceptional device electrical characteristics matching. Since these devices are on the same monolithic chip, they also exhibit excellent tempco tracking characteristics.