ALD110908 Overview
ALD110808A/ALD110808/ALD110908A/ALD110908 are high precision monolithic quad/dual enhancement mode N-Channel MOSFETs matched at the factory using ALD’s proven EPAD® CMOS technology. These devices are intended for low voltage, small signal applications. These MOSFET devices are built on the same monolithic chip, so they exhibit excellent temperature tracking characteristics.
ALD110908 Key Features
- Enhancement-mode (normally off)
- Standard Gate Threshold Voltages: +0.80V
- Matched MOSFET to MOSFET characteristics
- Tight lot to lot parametric control
- Low input capacitance
- VGS(th) match to 2mV and 10mV
- High input impedance
- 1012Ω typical
- Positive, zero, and negative VGS(th) temperature coefficient
- DC current gain >108