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ALD110908 Datasheet PDF

Advanced Linear Devices ALD110908

The high input impedance and the high DC current gain of the Field Effect Transistors result from extremely low current loss through the control gate. The DC current gain is limited by the gate input leakage current, which is specified at 30pA at room temperature.
Part No. ALD110908
Datasheet ALD110908 Download
Manufacturer
Advanced Linear Devices
Description QUAD/DUAL N-CHANNEL MOSFET
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ALD110908 datasheet page 1 preview

GENERAL DESCRIPTION

ALD110808A/ALD110808/ALD110908A/ALD110908 are high precision monolithic quad/dual enhancement mode N-Channel MOSFETs matched at the factory using ALD’s proven EPAD® CMOS technology. These devices are intended for low voltage, small signal applications. These MOSFET devices are built on the same monolithic chip, so they exhibit excellent temperature tracking characteristics. They are versatile as circuit elements and are useful design component for a broad range of analog applications. They are basic building blocks for current sources, differential amplifier input stages, transmission gates, and multiplexer applications. For most applications, connect the V+ pin to the most positive voltage and the V- and IC pins to the most negative voltage in the system. All other pins must have voltages within these voltage limits at all times. ALD110808/ALD110908 devices are built for minimum offset voltage and differential thermal response, and they are suited for switching and amplifying applications in +1.0V to +10V (+/-5V) systems where low input bias current, low input capacitance and fast switching speed are desired.
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