Datasheet Summary
FINAL
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
DISTINCTIVE CHARACTERISTICS s High performance
- 70 ns maximum access time s CMOS Low power consumption
- 30 mA maximum active current
- 100 µA maximum standby current
- No data retention power consumption s patible with JEDEC-standard byte-wide 32-Pin EPROM pinouts
- 32-pin PDIP
- 32-pin PLCC
- 32-pin TSOP s 10,000 write/erase cycles minimum s Write and erase voltage 12.0 V ±5% s Latch-up protected to 100 mA from
- 1 V to V CC +1 V s Flasherase™ Electrical Bulk Chip-Erase
- One second typical chip-erase s Flashrite™ Programming
- 10 µs typical byte-program
- Two seconds typical chip program s mand...