Am28F010A Datasheet PDF

FINAL Am28F010A 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS s High performance — Access times as fast as 70 ns s CMOS low power consumption — 30 mA maximum active current — 100 µA maximum standby current — No data retention power consumption s Compatible with JEDEC-standard byte-wide 32-pin EPROM pinouts — 32-pin PDIP — 32-pin PLCC — 32-pin TSOP s 100,000 write/erase cycles minimum s Write and erase voltage 12.0 V ±5% s Latch-up protected to 100 mA from –1 V to VCC +1 V s Embedded Erase Electrical Bulk Chip Erase — 5 seconds typical chip erase, including pre-programming s Embedded Program — 14 µs typical byte program, including time-out — 4 seconds typical chip program s Command register architecture for microprocessor/microcontroller compatible write interface s On-chip address and data latches s Advanced CMOS flash memory technology — Low cost single transistor memory cell s Embed