4525GEH datasheet by Advanced Power Electronics Corp.
| Part number | 4525GEH |
|---|---|
| Datasheet | 4525GEH_AdvancedPowerElectronics.pdf |
| File Size | 226.27 KB |
| Manufacturer | Advanced Power Electronics Corp |
| Description | AP4525GEH |
|
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Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. o Symbol Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. Units 1.8 V ns nC Reverse Recovery Time Reverse Recovery Charge 2 AP4525GEH.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
4525GEH | N- and P-Channel 40V MOSFET | VBsemi |
|
4525GEM | N- and P-Channel 60V MOSFET | VBsemi |
View all Advanced Power Electronics Corp datasheets
| Part Number | Description |
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