4525GEH Datasheet
4525GEH Datasheet (VBsemi)
VBsemi
4525GEH-VB 4525GEH-VB Datasheet N- and P-Channel 40 V (D-S) MOSFET PRODUCT SUMMARY N-CHANNEL P-CHANNEL VDS (V) RDS(on) () at VGS = ± 10 V RDS(on) () at VGS = ± 4.5 V ID (A) Configuration 40 - 4.
* Trench Power MOSFET
* 100 % Rg and UIS Tested
APPLICATIONS
* CCFL Inverter
TO-252-4L D-PAK D1/D2
Top View Drain Connected to Tab
S1 G1 S2 G2
D1/D2
G1 S1
N -channel
G2 S2
P-channel
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
N-CHANNEL
P-CH.
4525GEH Datasheet (Advanced Power Electronics Corp)
Advanced Power Electronics Corp
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. D1 G1 G2 D2 S1 S2 Absolute M.
j-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 12 110 Unit ℃/W ℃/W Data and specifications subject to change without notice 1 200809235 AP4525GEH N-CH Electrical Characteristics@ Tj=25 C(unless otherwise specified) .