Datasheet Details
| Part number | 9916H |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 144.40 KB |
| Description | AP9916H |
| Download | 9916H Download (PDF) |
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| Part number | 9916H |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 144.40 KB |
| Description | AP9916H |
| Download | 9916H Download (PDF) |
|
|
|
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=125℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current 1 Rating 18 ± 12 35 16 90 50 0.4 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.
Max.
www.DataSheet.co.kr AP9916H/J Advanced Power Electronics Corp.
▼ Low on-resistance ▼ Capable of 2.
| Part Number | Description |
|---|---|
| 9916H | AP9916H |
| 9915H | AP9915H |
| 9918H | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |