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AP03N40AJ-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

The AP03N40A provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching, ruggedized design and cost-effectiveness.

The TO-251 package is widely preferred for commercial-industrial throughhole applications.

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Other Datasheets by Advanced Power Electronics Corp

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AP03N40AH-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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AP03N40AP-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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AP03N40I-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP03N40AJ-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 400V 2.6Ω 2.7A S Description The AP03N40A provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching, ruggedized design and cost-effectiveness. The TO-251 package is widely preferred for commercial-industrial throughhole applications. G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 400 +20 2.7 10 44.