Datasheet Details
| Part number | AP04N80I-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 107.53 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP04N80I-HF_AdvancedPowerElectronics.pdf |
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Overview: AP04N80I-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ RoHS pliant G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 800V 4.5Ω 3.
| Part number | AP04N80I-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 107.53 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP04N80I-HF_AdvancedPowerElectronics.pdf |
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AP04N80 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications.
TO-220CFM type provide high blocking voltage to overe voltage surge and sag in the toughest power system with the best bination of fast switching, ruggedized design and costeffectiveness.
G D S TO-220CFM(I) Absolute Maximum Ratings http://..net/ Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 800 +30 3.2 1.7 12 34.7 3 Units V V A A A W mJ ℃ ℃ Total Power Dissipation Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 4.5 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 3.6 65 Units ℃/W ℃/W Data & specifications subject to change without notice 1 201108182 datasheet pdf - http://..net/ AP04N80I-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=1A VDS=VGS, ID=250uA VDS=10V, ID=1A VDS=640V, VGS=0V VGS=+30V
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