▼ High Speed Switching
▼ NPT Technology ▼ RoHS Compliant & Halogen-Free
GC E
Absolute Maximum Ratings
Symbol
Parameter
VCES VGE IC@TC=25℃ IC@TC=100℃ ICM IF@TC=100℃ IFM PD@TC=25℃ TSTG TJ TL
Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current1 Diode Forward Current Diode Pulse Forward Current Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Maximum Lead Temp. for Soldering Purposes
, 1/8" from ca.
Full PDF Text Transcription for AP05G120NSW-HF (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
AP05G120NSW-HF. For precise diagrams, and layout, please refer to the original PDF.
Advanced Power Electronics Corp. AP05G120NSW-HF Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. Features ▼ High Speed Switching ▼ NPT Technolog...
View more extracted text
R TRANSISTOR WITH FRD. Features ▼ High Speed Switching ▼ NPT Technology ▼ RoHS Compliant & Halogen-Free GC E Absolute Maximum Ratings Symbol Parameter VCES VGE IC@TC=25℃ IC@TC=100℃ ICM IF@TC=100℃ IFM PD@TC=25℃ TSTG TJ TL Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current1 Diode Forward Current Diode Pulse Forward Current Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Maximum Lead Temp. for Soldering Purposes , 1/8" from case for 5 seconds . TO-3P VCES IC Rating 1200 +30 21 10.5 42 8 40 125 -55 to 150 -55 to 150 300 1200V 10.5
More Datasheets from Advanced Power Electronics Corp
AP05G120NSW-HF Datasheet
