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AP05G120SW-HF - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Datasheet Summary

Features

  • ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat)=2.3V@IC=5A ▼ CO-PAK, IGBT With FRD ▼ RoHS Compliant & Halogen-Free G C E TO-3P Absolute Maximum Ratings Symbol Parameter VCES VGE IC@TC=25℃ IC@TC=100℃ ICM IF@TC=100℃ IFM PD@TC=25℃ TSTG TJ TL Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current1 Diode Forward Current Diode Pulse Forward Current Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Ran.

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Datasheet preview – AP05G120SW-HF

Datasheet Details

Part number AP05G120SW-HF
Manufacturer Advanced Power Electronics
File Size 58.83 KB
Description N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Datasheet download datasheet AP05G120SW-HF Datasheet
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Full PDF Text Transcription

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Advanced Power Electronics Corp. AP05G120SW-HF Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. Features ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat)=2.3V@IC=5A ▼ CO-PAK, IGBT With FRD ▼ RoHS Compliant & Halogen-Free G C E TO-3P Absolute Maximum Ratings Symbol Parameter VCES VGE IC@TC=25℃ IC@TC=100℃ ICM IF@TC=100℃ IFM PD@TC=25℃ TSTG TJ TL Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current1 Diode Forward Current Diode Pulse Forward Current Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Maximum Lead Temp. for Soldering Purposes , 1/8" from case for 5 seconds . VCES IC G Rating 1200 +30 21 10.5 42 6 40 125 -55 to 150 -55 to 150 300 1200V 10.
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