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AP0903GM Datasheet N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacturer: Advanced Power Electronics Corp

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General Description

D D D D SO-8 G SS S Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

BVDSS RDS(ON) ID 30V 8.5mΩ 13.3A D G S Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range TJ Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Rating 30 +20 13.3 10.7 50 2.5 -55 to 150 -55 to 150 Value 50 Units V V A A A W ℃ ℃ Unit ℃/W Data and specifications subject to change without notice 1 200812122 AP0903GM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.

Overview

Advanced Power Electronics Corp.

AP0903GM RoHS-compliant Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance ▼ Simple Drive Requirement ▼ Fast Switching.

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