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AP0904GJB-HF Datasheet N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacturer: Advanced Power Electronics Corp

General Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on□ resistance and cost-effectiveness.

The TO-251S short lead package is preferred for all commercialindustrial through-hole applications without lead-cutted.

G D S TO-251S(JB) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 40 +20 51 32 200 44.6 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maixmum Thermal Resistance, Junction-ambient Value 2.8 110 Units ℃/W ℃/W 1 201203291 Data & specifications subject to change without notice Free Datasheet http://www.dat AP0904GJB-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 o Test Conditions VGS=0V, ID=250uA VGS=10V, ID=30A VGS=4.5V, ID=20A VDS=VGS, ID=250uA VDS=10V, ID=20A VDS=40V, VGS=0V VGS=+20V, VDS=0V ID=20A VDS=20V VGS=4.5V VDS=20V ID=1A RG=3.3Ω VGS=10V VGS=0V VDS=25V f=1.0MHz Min.

Overview

AP0904GJB-HF Halogen-Free Product Advanced Power Electronics Corp.