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AP09N50I - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.

The TO-220CFM isolation package is widely preferred for commercialindustrial through hole applications.

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Datasheet Details

Part number AP09N50I
Manufacturer Advanced Power Electronics
File Size 88.16 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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AP09N50I RoHS-compliant Product Advanced Power Electronics Corp. ▼ Low On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 500V 0.75Ω 9A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220CFM isolation package is widely preferred for commercialindustrial through hole applications. G D S TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 500 +30 9 5.6 36 36.
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