Datasheet4U Logo Datasheet4U.com

AP10N70I-A - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Datasheet Summary

Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220CFM isolation package is widely preferred for commercial-industrial through hole applications.

📥 Download Datasheet

Datasheet preview – AP10N70I-A

Datasheet Details

Part number AP10N70I-A
Manufacturer Advanced Power Electronics
File Size 203.12 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet AP10N70I-A Datasheet
Additional preview pages of the AP10N70I-A datasheet.

📁 Similar Datasheet

  • AP10N70P-A - N-CHANNEL MOSFET (A-POWER)
  • AP10N70R-A - N-CHANNEL MOSFET (A-POWER)
  • AP100-B10 - AC Current transducer (LEM)
  • AP100-B420L - AC Current transducer (LEM)
  • AP100N02D - 20V N-Channel Enhancement Mode MOSFET (APM)
  • AP100N03BD - 30V N-Channel Enhancement Mode MOSFET (APM)
  • AP100N03D - 30V N-Channel Enhancement Mode MOSFET (APM)
  • AP100N03P - 30V N-Channel Enhancement Mode MOSFET (APM)
  • AP100N03T - 30V N-Channel Enhancement Mode MOSFET (APM)
  • AP100N06NF - 60V N-Channel Enhancement Mode MOSFET (APM)
Other Datasheets by Advanced Power Electronics
  • AP10N70I-A-HF - N-Channel MOSFET
  • AP10N70P - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP10N70P-A - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP10N70R - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP10N70R-A - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP10N70S - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP10N70W - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP10N70W-HF-3 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription

Click to expand full text
AP10N70I-A RoHS-compliant Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 650V 0.62Ω 10A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220CFM isolation package is widely preferred for commercial-industrial through hole applications. G D S TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 650 ± 30 10 6.
Published: |