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AP10N70I-A - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220CFM isolation package is widely preferred for commercial-industrial through hole applications.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP10N70I-A RoHS-compliant Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 650V 0.62Ω 10A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220CFM isolation package is widely preferred for commercial-industrial through hole applications. G D S TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 650 ± 30 10 6.