Datasheet Details
| Part number | AP10N70I-A |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 203.12 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP10N70I-A-AdvancedPowerElectronics.pdf |
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Overview: AP10N70I-A RoHS-pliant Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 650V 0.
| Part number | AP10N70I-A |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 203.12 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP10N70I-A-AdvancedPowerElectronics.pdf |
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Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for mercial-industrial through hole applications.
G D S TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 650 ± 30 10 6.8 40 31.3 2 Units V V A A A W mJ ℃ ℃ Total Power Dissipation Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 50 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 4 65 Unit ℃/W ℃/W Data & specifications subject to change without notice 1 200810311 http://..
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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AP10N70P-A | N-CHANNEL MOSFET | A-POWER |
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AP10N70R-A | N-CHANNEL MOSFET | A-POWER |
| Part Number | Description |
|---|---|
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