Datasheet4U Logo Datasheet4U.com

AP11N50I - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Datasheet Summary

Description

AP11N50 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

📥 Download Datasheet

Datasheet preview – AP11N50I

Datasheet Details

Part number AP11N50I
Manufacturer Advanced Power Electronics
File Size 54.51 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet AP11N50I Datasheet
Additional preview pages of the AP11N50I datasheet.

📁 Similar Datasheet

  • AP110N03D - 30V N-Channel Enhancement Mode MOSFET (APM)
  • AP1110 - 2.4 - 2.5 GHz Power Amplifier (RFIC)
  • AP1115 - 0.6A LOW DROPOUT POSITIVE ADJUSTABLE OR FIXED-MODE REGULATOR (Diodes Incorporated)
  • AP1115 - 0.6A Low Dropout Positive Adjustable or Fixed-Mode Regulator (Anachip)
  • AP1116 - 0.5A Low Dropout Positive Adjustable or Fixed-Mode Regulator (Anachip)
  • AP1117 - 1A Low Dropout Positive Adjustable or Fixed-Mode Regulator (Analog Technology)
  • AP1117 - 1A Low Dropout Positive Adjustable or Fixed-Mode Regulator (Anachip)
  • AP1117 - 1A LOW DROPOUT POSITIVE ADJUSTABLE OR FIXED-MODE REGULATOR (Diodes Incorporated)
  • AP1117C - 1A Adjustable & Fixed Voltage LDO Linear Regulator (Anwell Semiconductor)
  • AP1117I - 1A DROPOUT POSITIVE ADJUSTABLE OR FIXED-MODE REGULATOR (Diodes)
Other Datasheets by Advanced Power Electronics

Full PDF Text Transcription

Click to expand full text
Advanced Power Electronics Corp. AP11N50I Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G D S Description AP11N50 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink. VDS @ Tj,max. RDS(ON) ID 550V 0.
Published: |