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AP11N50I - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

AP11N50 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Other Datasheets by Advanced Power Electronics Corp

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Advanced Power Electronics Corp. AP11N50I Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G D S Description AP11N50 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink. VDS @ Tj,max. RDS(ON) ID 550V 0.