Datasheet Details
| Part number | AP13N50W |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 54.31 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP13N50W-AdvancedPowerElectronics.pdf |
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Overview: AP13N50W RoHS-pliant Product Advanced Power Electronics Corp. ▼ Low On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 500V 0.
| Part number | AP13N50W |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 54.31 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP13N50W-AdvancedPowerElectronics.pdf |
|
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|
Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
G D S TO-3P Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 500 +30 14 9 50 156 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 0.8 40 Units ℃/W ℃/W 1 201008112 Data and specifications subject to change without notice AP13N50W Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 Test Conditions VGS=0V, ID=1mA VGS=10V, ID=7A VDS=VGS, ID=250uA VDS=10V, ID=7A VDS=400V, VGS=0V VGS=+30V, VDS=0V ID=14A VDS=200V VGS=10V VDD=200V ID=7A RG=50Ω VGS=10V VGS=0V VDS=30V f=1.0MHz Min.
500 2 - Typ.
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