Datasheet Details
| Part number | AP18P10GS |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 192.51 KB |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Download | AP18P10GS Download (PDF) |
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| Part number | AP18P10GS |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 192.51 KB |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Download | AP18P10GS Download (PDF) |
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Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
The TO-263 package is wide ly preferred for commercial- industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
GD S TO-263(S) Absolute Maximum Ratings www.DataSheet.net/ Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating -100 ±20 -12 -10 -48 35.7 0.29 2 Units V V A A A W W/ ℃ mJ A ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 40 -9 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 3.5 62 Units ℃/W ℃/W Data and specifications subject to change without notice 201018072-1/4 Datasheet pdf - http://www.DataSheet4U.co.kr/ AP18P10GS Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance3 Test Conditions VGS=0V, ID=-1mA VGS=-10V, ID=-8A VGS=-4.5V, ID=-6A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=150oC) Min.
AP18P10GS RoHS-compliant Product Advanced Power Electronics Corp.
| Part Number | Description |
|---|---|
| AP18P10GS-HF-3 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP18P10GH | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP18P10GH-HF | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP18P10GJ | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP18P10GJ-HF | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP18P10GK-HF | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP18P10GM-HF | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP18P10AGH-HF | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP18P10AGJ-HF | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP1801GU | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |