AP18T10GI - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics Corp

General Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220CFM isolation package is widely preferred for commercial-industrial through hole applications.

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AP18T10GI n-channel enhancement mode power mosfet by Advanced Power Electronics Corp - Datasheet Preview

Datasheet Details

Part number	AP18T10GI
Manufacturer	Advanced Power Electronics Corp
File Size	90.41 KB
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	AP18T10GI Datasheet

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AP18T10GI RoHS-compliant Product Advanced Power Electronics Corp. ▼ Fast Switching Performance ▼ Single Drive Requirement ▼ Full Isolation Package G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 100V 160mΩ 9A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220CFM isolation package is widely preferred for commercial-industrial through hole applications. G D S TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 100 +20 9 5.