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AP2304AGN - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

The SOT-23 package is universally used for all commercial-industrial applications.

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Other Datasheets by Advanced Power Electronics Corp

Part Number Description
AP2304AGN-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2304AGN-HF-3 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2304AN N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2304GN N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2304GN-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP2304AGN Pb Free Plating Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device S SOT-23 G D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 117mΩ 2.5A Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is universally used for all commercial-industrial applications. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage www.DataSheet4U.com Parameter Rating 30 ±20 Units V V A A A W W/ ℃ ℃ ℃ Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V Pulsed Drain Current 1 3 3 2.