AP2305N Datasheet | Advanced Power Electronics Corp

Description SOT-23 The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, , low on-resistance and cost-effectiveness. The SOT-23 package is universally preferred for all mercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1,2 3 3 .. Parameter Rating - 20 ± 12 -4.2 -3.4 -10 1.38 0.01 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient Value Max. 90 Unit ℃/W Data and specifications subject to change without notice Electrical Characteristics@Tj=25o C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250u A Min. -20 -0.5 - Typ. -0.1 Max. Units 53 65 100 250 -1 -10 ±100 V V/℃ mΩ mΩ mΩ mΩ V S u A u A n A n C n C n C ns ns ns ns p F p F p F Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1m A RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-4.5A VGS=-4.5V, ID=-4.2A VGS=-2.5V, ID=-2.0A VGS=-1.8V, ID=-1.0A 9 10.6 2.32 3.68 5.9 3.6 32.4 2.6 740 167 126 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=55 C) o o VDS=VGS, ID=-250u A VDS=-5V, ID=-2.8A VDS=-20V, VGS=0V VDS=-16V, VGS=0V VGS= ± 12V ID=-4.2A VDS=-16V VGS=-4.5V VDS=-15V ID=-4.2A RG=6Ω,VGS=-10V RD=3.6Ω VGS=0V VDS=-15V f=1.0MHz Gate-Source Leakage Total Gate...